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Farhad Akbari Boroumand

Assistant Professor

Phone No: +98 21 84062406

Email: boroumand@kntu.ac.ir

Personal website: http://wp.kntu.ac.ir/boroumand


       Post Doctorate: Nano-Organic, Electronics Sheffield University, U.K., 2005.

       Ph.D.: Solid-State Electronics, King’s College, University of London, U.K., 2000.

       M.Sc.: Integrated Electronics, Indian Institute of Technology, New Delhi, India, 1992.

       B.Sc.: Electronics Engineering, Mashhad University, Mashhad, Iran, 1988.

Research Interest:

  • Nano-Electronics and Nano-Technology
  • Organic Electronics
  • Solid-State Electronics
  • Opto-Electronics


Farhad A. Boroumand received a Bachelor in Electronics (B.E.) degree in electronics from the Ferdowsi University of Mashhad, Iran, in 1988, the M.Tech. Degree from the Indian Institute of Technology Delhi, New Delhi, India, in 1992, and the Ph.D. degree in integrated electronics from King’s College London, U.K., in 2000, focusing on interactions between isolated GaAs-based MESFET’s. In 2000 and 2006, he worked on four post-doctoral research projects at Sheffield University and Surrey University, U.K., concerning nano and organic electronics and photonic devices. He is currently an Assistant Professor with the K. N. Toosi University of Technology, Tehran, Iran, teaching courses such as nanotechnology, organic electronics, semiconductor devices, and modern physics. He has published over 90 journal and conference papers.

Selected journal papers:

  1. Rezaie, M.N., Manavizadeh, N., Nadimi, E., Boroumand, F.A., “Quality enhancement of AZO thin films at various thicknesses by introducing ITO buffer layer,” Journal of Materials Science: Materials in Electronics, 2017.
  2. Rezaie, M.N., Manavizadeh, N., Abadi, E.M.N., Nadimi, E., Boroumand, F.A., “Comparison study of transparent RF-sputtered ITO/AZO and ITO/ZnO bilayers for near UV-OLED applications,” Applied Surface Science, 2017.
  3. Hakimi, M., Salehi, A., Boroumand, F.A., “Fabrication and Characterization of an Ammonia Gas Sensor Based on PEDOT-PSS with N-doped Graphene Quantum Dots Dopant,” IEEE Sensors Journal, 2016.
  4. Shabani, P., Qarehbaqi, A., Boroumand, F.A., “Selective enhancement of intra-chain charge transport to improve ammonia sensing performance in polyaniline layers.,” Electronic Materials Letters, 2016.
  5. Mohsennia, M., Bidgoli, M.M., Khoddami, M.H., Salehi, A.,Boroumand, F.A., “Bulk-heterojunction polymer solar cells with polyaniline-silica nanocomposites as an efficient hole-collecting layer.,” Journal of Nanophotonics, 2016.

Contact Us

Address: Faculty of Electrical Engineering, K.N. Toosi University of Technology, 

Seyed-Khandan, Shariati Ave., Tehran, Iran.

Postal Code: 16317-14191

P. O. Box:16315-1355

Tel: +98-21-8846-9084

Fax: +98-21-8846-2066

Email: eehead@kntu.ac.ir